d1113 tkim tc-00003076/60612tkim/21809pe msim tc-00001860 no. a1353-1/5 http://onsemi.com semiconductor components industries, llc, 2013 december, 2013 mch3478 n-channel power mosfet 30v, 2a, 165m , single mcph3 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? low on-resistance ? ultrahigh speed switching ? 1.8v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain to source voltage v dss 30 v gate to source voltage v gss 12 v drain current (dc) i d 2a drain current (pw 10s) i d duty cycle 1% 2.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% 8 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 0.8 w when mounted on ceramic substrate (900mm 2 0.8mm), pw=10s 1.2 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7019a-003 ordering number : ENA1353b product & package information ? package : mcph3 ? jeita, jedec : sc-70, sot-323 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection fk lot no. lot no. tl 1 2 3 1 : gate 2 : source 3 : drain mcph3 0.25 0.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 12 3 0 to 0.02 mch3478-tl-h mch3478-tl-w
mch3478 no. a1353-2/5 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain to source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate to source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.4 1.3 v forward transfer admittance | yfs | v ds =10v, i d =1a 1.2 2.0 s static drain to source on-state resistance r ds (on)1 i d =1a, v gs =4.5v 125 165 m r ds (on)2 i d =0.5a, v gs =2.5v 165 235 m r ds (on)3 i d =0.3a, v gs =1.8v 250 375 m input capacitance ciss v ds =10v, f=1mhz 130 pf output capacitance coss 21 pf reverse transfer capacitance crss 14 pf turn-on delay time t d (on) see speci ed test circuit. 4.4 ns rise time t r 8.7 ns turn-off delay time t d (off) 16 ns fall time t f 12 ns total gate charge qg v ds =10v, v gs =4.5v, i d =2a 1.7 nc gate to source charge qgs 0.25 nc gate to drain ?miller? charge qgd 0.38 nc diode forward voltage v sd i s =2a, v gs =0v 0.85 1.2 v switching time test circuit ordering information device package shipping memo mch3478-tl-h mcph3 3,000pcs./reel pb free and halogen free mch3478-tl-w pw=10 s d.c. 1% 4.5v 0v v in p. g 50 g s i d =1a r l =15 v dd =15v v out v in d mch3478
mch3478 no. a1353-3/5 i d -- v gs drain current, i d -- a gate to source voltage, v gs -- v drain to source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 0.6 0.4 0.2 1.2 1.0 0.8 1.6 1.4 1.8 2.0 0 0.6 0.4 0.2 1.2 1.0 0.8 1.6 1.4 1.8 2.0 0 it14137 it14138 0.1 0.4 0.2 0.6 0.5 0.3 0.8 0.7 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 v ds =10v --25 c ta=75 c v gs =1.2v 1.8v 25 c 4.5v 2.5 v 1.5v 3.5v 7.0v gate to source voltage, v gs -- v static drain to source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs static drain to source on-state resistance, r ds (on) -- m i s -- v sd source current, i s -- a diode forward voltage, v sd -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a ciss, coss, crss -- v ds drain to source voltage, v ds -- v ciss, coss, crss -- pf 0 0.4 0.2 0.6 1.2 1.0 0.8 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 5 3 --60 --40 --20 0 20 40 60 80 100 120 140 160 0 50 150 100 350 300 450 400 250 200 v gs =1.8v, i d =0.3a v gs =4.5v, i d =1.0a v gs =2.5v, i d =0.5a it14139 ta=25 c it14140 it14141 it14142 ta= --25 c 75 c 25 c v ds =10v --25 c 25 c ta=75 c v gs =0v 10 7 5 3 2 7 5 3 2 0.1 2 1.0 357 it14143 v dd =15v v gs =4.5v t d (off) t r t f 10 23 57 t d (on) i d =0.3a 1a 01 56 4 3 2810 79 0 100 50 200 150 400 300 250 350 450 0.1 2 2 1.0 7 7 5 3 5 3 0.1 2 0.01 57 23 1.0 2 57 33 0.5a 030 10 15 20 25 5 it14144 10 7 7 100 5 3 2 7 5 5 3 2 crss coss ciss f=1mhz
mch3478 no. a1353-4/5 total gate charge, qg -- nc v gs -- qg gate to source voltage, v gs -- v s o a drain to source voltage, v ds -- v drain current, i d -- a operation in this area is limited by r ds (on). dc operation ( ta=25 c ) 100 s 1ms 10ms 100ms it14146 2 3 5 7 2 0.1 3 5 7 1.0 2 2 3 5 7 10 0.01 0.1 0.01 57 23 2 57 23 3 2 57 3 1.0 10 5 i dp =8a i d =2a(dc) i d =2.5a(pw=10s) 0 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 it14145 v ds =10v i d =2a 10s pw 10 s ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it14147 0 0 20 40 0.4 0.6 60 80 100 120 140 160 1.0 1.2 0.2 0.8 1.4 dc operation pw=10s when mounted on ceramic substrate (900mm 2 0.8mm)
mch3478 ps no. a1353-5/5 note on usage : since the mch3478 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner. outline drawing land pattern example mch3478-tl-h, mch3478-tl-w mass (g) unit 0.007 * for reference mm unit: mm 0.65 0.65 0.4 2.1 0.6
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